|
論文標題
|
Mn-doped amorphous Si:H films with anomalous Hall effect up to 150 K
|
|
內容摘要
|
Structural, magnetic and electrical properties were investigated of Mn- doped amorphous
silicon films prepared by magnetron-sputtering with and without hydrogen. Ferromagnetism
at room temperature was observed and no clusters or second phases were detected
from XRD and HRTEM analyses. Hydrogenation enhances saturation magnetization, carrier
concentration and Curie temperature by about 500 %, 300 ~ 500 % and 100 K, respectively.
The M-T curve of hydrogenated sample fits very well by combination of Curie-Weiss
law and 3D spin-wave. Anomalous Hall effect was reproducibly obtained at 150 K.
These suggest that the origin of ferromagnetism may arise from the carrier mediated
mechanism.
|
|
期刊名稱
|
Applied Physics Letter 94, 072507 (2009)
|
|
主要作者
|
Jia-Hsien Yao(姚佳賢), Ming-De Lan (藍明德), Shin-Chih Li, Tsung-Shune Chin (金重勳)
|
|
全文連結
|
http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000094000007072507000001&idtype=cvips&gifs=yes
|