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論文標題
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Ga2Te3Sb5 - A Candidate for Fast and Ultra-long Retention Phase-change Memory |
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內容摘要
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We have explored a novel Ga2Te3Sb5 (Ga-TS) as active material for high performance phase change memory. Test-cells 200 nm by 200 nm made of Ga-TS were prepared and their electrical characteristics measured. From R-I curves, the Ga-TS test-cells show an Ireset 2.6 + 0.2 mA. The test-cells can be SET-RESET by a pulse width as short as 20 ns. Endurance results of Ga-TS test-cells, which though contain an unfavorable extraneous interfacial-layer, exceeded 2x105 SET- RESET cycles. Moreover, the Ga-TS material has a low melting temperature (563 oC) while high crystallization temperature (228 oC) and with a high activation energy of crystallization 4.5 eV. This leads to a lessened thermal cross-talk problem and a brilliant performance on data retention which is extrapolated to 10 years at 160 oC and more than a million years at 120 oC. The test-cells also demonstrate a capability of three-level resistance changes in a single memory unit. This makes possible a three-level per cell memory to facilitate higher memory capacity |
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期刊名稱
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National Science and Technology Program for Nanoscience and Nanotechnology |
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主要作者
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Kin-Fu Kao (高金福), Chain-Ming Lee (李乾銘), Ming-Jung Chen (陳明忠), Ming-Jinn Tsai (蔡銘進) and Tsung-Shune Chin (金重勳) |
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全文連結
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http://www3.interscience.wiley.com/journal/122186300/abstract
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